BLP25M705

BLP25M705 Broadband LDMOS driver transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information Test signal f (MHz) Pulsed RF [1] 2450 CW 2450 [1] Measured at  = 10 %, tp = 12 s. IDq (mA) 50 65 VDS PL Gp D (V) (W) (dB) (%) 28 5 15.8 41.4 28 5 16.4 50 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  High power gain  Designed for broadband operation (HF to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP25M705 Broadband LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin 1, 4, 5, 6, 7, 8, 9, 12 2, 3 10, 11 13 [1] Connected to flange. Description Simplified outline n.c. gate   drain source [1]  7UDQVSDUHQWWRSYLHZ 3. Ordering information Graphic symbol    DDD Table 3. Ordering information Type number Package Name Description Version BLP25M705 HVSON12 plastic thermal enhanced very thin small outline SOT1179-2 package; no leads; 12 terminals; body 6  4  0.85 mm 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating S...