Document
SM7580NSF
Features
· 80V/83A,
RDS(ON)=9.6mW (max.) @ VGS=10V
· Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS Top View of TO-220
D
Applications
· Switching Application
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7580NS
Assembly Material Handling Code
Temperature Range Package Code
Package Code F : TO-220
Operating Junction Temperature Range C : -55 to 150 oC
Handling Code TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7580NS F : SM7580N XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013
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SM7580NSF
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V DSS
Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case RqJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy, Single Pulsed
TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
L=2mH
®
Rating
80 ±25 150 -55 to 150 83 200 83 52 113 45 1.1 62.5 460
Unit V °C
A
W °C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250mA
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250mA
IDSS Zero Gate Voltage Drain Current
VDS=60V, VGS=0V TJ=85°C
VGS (th) IGSS RDS(ON) a
Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VDS=VGS, IDS=250mA VGS=±25V, VDS=0V VGS=10V, IDS=40A
Diode Characteristics
VSDa
Diode Forward Voltage
ISD=20A, VGS=0V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
ISD=40A, dlSD/dt=100A/ms
80 2 -
-
Typ.
0.073
3 8
0.8 41 71
Max.
1 30 4 ±100 9.6
1.3 -
Unit
V V/°C
mA V nA mW
V ns nC
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013
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SM7580NSF
®
Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz
VDD=30V, RL=30W, IDS=1A, VGEN=10V, RG=6W
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=40V, VGS=10V, IDS=40A
Note a : Pulse test ; pulse width£300ms, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.
Min.
-
-
Typ.
1 4460 362 276
23 16 75 38
89 23 26
Max.
6240
41 29 135 68
125 -
Unit W pF ns
nC
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013
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SM7580NSF
Typical Operating Characteristics
®
Ptot - Power (W)
Power Dissipation
120
100
80
60
40
20 T =25oC
0C 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
ID- Drain Current (A)
Drain Current
100
80
60
40
20 0 TC=25oC,VG=10V 0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
ID- Drain Current (A)
Rds(on) Limit
Safe Operation Area
600
1ms 100
10ms 100ms
1s 10
1 TC=25oC 0.1
1
DC 10 100 300
VDS - Drain - Source Voltage (V)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
2
1 Duty = 0.5
0.1 0.01
0.2 0.1 0.05 0.02 0.01
Single Pulse
1E-3 1E-4 1E-3 0.01
Mounted on minimum pad RqJA : 62.5oC/W
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013
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SM7580NSF
Typical Operating Characteristics (Cont.)
®
ID- Drain Current (A)
Output Characteristics
200 VGS=7,8,9,10V
175 6V
150
125 5.5V
100
75 5V
50
25 4.5V 4V
0 012345
VDS - Drain - Source Voltage (V)
DS(ON)R - On - Resistance (mW)
Drain-Source On Resistance
12 11
10
9 VGS=10V
8
7 6
5
4 0 20 40 60 80 100
ID- Drain Current (A)
DS(ON)R - On - Resistance (mW)
Gate-Source On Resistance
28 IDS=40A
24
20
16
12
8
4 4 5 6 7 8 9 10
VGS - G.