DatasheetsPDF.com

SM7580NSF Dataheets PDF



Part Number SM7580NSF
Manufacturers Sinopower
Logo Sinopower
Description N-channel MOSFET
Datasheet SM7580NSF DatasheetSM7580NSF Datasheet (PDF)

SM7580NSF Features · 80V/83A, RDS(ON)=9.6mW (max.) @ VGS=10V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description GDS Top View of TO-220 D Applications · Switching Application G S N-Channel MOSFET Ordering and Marking Information SM7580NS Assembly Material Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube.

  SM7580NSF   SM7580NSF


Document
SM7580NSF Features · 80V/83A, RDS(ON)=9.6mW (max.) @ VGS=10V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description GDS Top View of TO-220 D Applications · Switching Application G S N-Channel MOSFET Ordering and Marking Information SM7580NS Assembly Material Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM7580NS F : SM7580N XXXXX XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 1 www.sinopowersemi.com SM7580NSF Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) V DSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RqJC Thermal Resistance-Junction to Case RqJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=2mH ® Rating 80 ±25 150 -55 to 150 83 200 83 52 113 45 1.1 62.5 460 Unit V °C A W °C/W mJ Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250mA IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=85°C VGS (th) IGSS RDS(ON) a Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VDS=VGS, IDS=250mA VGS=±25V, VDS=0V VGS=10V, IDS=40A Diode Characteristics VSDa Diode Forward Voltage ISD=20A, VGS=0V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=40A, dlSD/dt=100A/ms 80 2 - - Typ. 0.073 3 8 0.8 41 71 Max. 1 30 4 ±100 9.6 1.3 - Unit V V/°C mA V nA mW V ns nC Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 2 www.sinopowersemi.com SM7580NSF ® Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics b VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=30W, IDS=1A, VGEN=10V, RG=6W Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=40V, VGS=10V, IDS=40A Note a : Pulse test ; pulse width£300ms, duty cycle£2%. Note b : Guaranteed by design, not subject to production testing. Min. - - Typ. 1 4460 362 276 23 16 75 38 89 23 26 Max. 6240 41 29 135 68 125 - Unit W pF ns nC Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 3 www.sinopowersemi.com SM7580NSF Typical Operating Characteristics ® Ptot - Power (W) Power Dissipation 120 100 80 60 40 20 T =25oC 0C 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) ID- Drain Current (A) Drain Current 100 80 60 40 20 0 TC=25oC,VG=10V 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) ID- Drain Current (A) Rds(on) Limit Safe Operation Area 600 1ms 100 10ms 100ms 1s 10 1 TC=25oC 0.1 1 DC 10 100 300 VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance Thermal Transient Impedance 2 1 Duty = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 Single Pulse 1E-3 1E-4 1E-3 0.01 Mounted on minimum pad RqJA : 62.5oC/W 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 4 www.sinopowersemi.com SM7580NSF Typical Operating Characteristics (Cont.) ® ID- Drain Current (A) Output Characteristics 200 VGS=7,8,9,10V 175 6V 150 125 5.5V 100 75 5V 50 25 4.5V 4V 0 012345 VDS - Drain - Source Voltage (V) DS(ON)R - On - Resistance (mW) Drain-Source On Resistance 12 11 10 9 VGS=10V 8 7 6 5 4 0 20 40 60 80 100 ID- Drain Current (A) DS(ON)R - On - Resistance (mW) Gate-Source On Resistance 28 IDS=40A 24 20 16 12 8 4 4 5 6 7 8 9 10 VGS - G.


BTA100-1200B SM7580NSF CE2826


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)