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C3468 Dataheets PDF



Part Number C3468
Manufacturers Sanyo
Logo Sanyo
Description 2SC3468
Datasheet C3468 DatasheetC3468 Datasheet (PDF)

Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Features · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2006B [2SA1371/2SC3468] 6.0 5.0 4.7 0.5 0.6 6.0 3.0 14.0 8.5 0.5 0.5 ( ) : .

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Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Features · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2006B [2SA1371/2SC3468] 6.0 5.0 4.7 0.5 0.6 6.0 3.0 14.0 8.5 0.5 0.5 ( ) : 2SA1371 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)200V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)30V, IC=(–)10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)20mA, IB=(–)2mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)20mA, IB=(–)2mA * : The 2SA1371/2SC3468 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 123 1.45 1.45 1 : Emitter 2 : Collector 3 : Base SANYO :MP Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.0 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 40* 320* 150 MHz (–)0.6 V (–)1.0 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS (KT)/71598HA (KT)/3237KI/3135KI/1114KI, MT No.1413-1/5 Free Datasheet http://www.Datasheet4U.com Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance 2SA1371/2SC3468 Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 Cob VCB=(–)30V, f=1MHz Cre VCB=(–)30V, f=1MHz Ratings min.


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