Document
Ordering number:ENN1413D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1371/2SC3468
High-Definition CRT Display, Video Output Applications
Use
· Color TV chroma output and high breakdown voltage driver.
Features
· High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process.
Package Dimensions
unit:mm 2006B
[2SA1371/2SC3468]
6.0 5.0 4.7
0.5 0.6
6.0 3.0
14.0 8.5
0.5 0.5
( ) : 2SA1371
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)200V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)30V, IC=(–)10mA
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)20mA, IB=(–)2mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)20mA, IB=(–)2mA
* : The 2SA1371/2SC3468 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
123 1.45 1.45
1 : Emitter 2 : Collector 3 : Base SANYO :MP
Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.0 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
40* 320*
150 MHz
(–)0.6 V
(–)1.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/3237KI/3135KI/1114KI, MT No.1413-1/5
Free Datasheet http://www.Datasheet4U.com
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance
Reverse Transfer Capacitance
2SA1371/2SC3468
Symbol
Conditions
V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
Cob VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
Ratings min.