PJS6401

PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, [email protected]<71mΩ  RDS(ON) , [email protected], [email protected]<81mΩ  RDS(ON) , [email protected], [email protected]<110mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.014 grams  Marking: S01 SOT-23 6L-1 Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -30 +12 -4.6 -18.4 2 16 -55~150 62.5 UNITS V V A A W mW/ oC oC oC/W December 31,2014-REV.03 Page 1 PPJS6401 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time ...