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BLL8H1214L-500

NXP

LDMOS L-band radar power transistor


Description
BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 ...



NXP

BLL8H1214L-500

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