N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
10N60K
10A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N60K is an N-channel Powe...
Description
UNISONIC TECHNOLOGIES CO., LTD
10N60K
10A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON)<1.2Ω @ VGS=10V * Low Gate Charge (Typical 90nC) * Low CRSS ( typical 18 pF) * High Switching Speed * Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
10N60KL-TF3T-T
10N60KG-TF3T-T
TO-220F3
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tube Tube
MARKING INFORMATION
PACKAGE
TO-220F TO-220F1 TO-220F2 TO-220F3
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
MARKING
1 of 7
QW-R502-743.E
10N60K
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy Single Pulsed (Note 3)
IAR ID IDM EAS
10 A 10 A 38 A 300 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
TO-220F/TO-220F1 TO-220F3...
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