Silicon Power Schottky Diode
Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive
MBRF...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 150 V to 200 V VRRM Not ESD Sensitive
MBRF200150 thru MBRF200200R
VRRM = 150 V - 200 V IF(AV) = 200 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF200150(R)
MBRF200200(R)
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
150
106 150 -55 to 150 -55 to 150
200
141 200 -55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF200150(R)
Average forward current (per pkg) Peak forward surge current (per leg)
Maximum forward voltage (per leg)
Reverse current at rated DC blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-case (per leg)
IF(AV) IFSM VF IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 100 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C
200
1500
0.88 1 10 30
0.45
MBRF200200(R)
200
1500
0.92 1 10 30
0.45
Unit V V V °C °C
Unit A A V
mA
°C/W
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schottky-rectifiers/
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MBRF200150 thru MBRF200200R
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schottky-rectifiers/
2
MBRF200150 thru MBRF200200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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schottky-rectifiers/
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