OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
OptiMOS™-T2 Power-
Transistor
Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)
IPG20N04S4L-08A
Product Summary VDS RDS(on),max4) ID
40 V 8.2 mW 20 A
PG-TDSON-8-10
Type IPG20N04S4L-08A
Package PG-TDSON-8-10
Marking 4N04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4)
Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I D,pulse -
E AS I AS V GS
I D=10A -
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
20
80 145 15 ±16 54 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2015-09-16
IPG20N04S4L-08A
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 2.8 K/W - 100 - 60 -
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D= 22µA 1.2 1.7 2.2
Zero gate voltage drain current4)...
