Automotive Dual N-Channel MOSFET
www.vishay.com
SQJ980AEP
Vishay Siliconix
Automotive Dual N-Channel 75 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) ...
Description
www.vishay.com
SQJ980AEP
Vishay Siliconix
Automotive Dual N-Channel 75 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration
75 0.050 0.066
8 Dual
PowerPAK® SO-8L Dual
FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
D1 D2
6.15 mm
D 2
4 G2
3 S2
2 G1 1
S1
5.13 mm
D 1
Bottom View
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
PowerPAK SO-8L SQJ980AEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
TC = 25 °C TC = 125 °C
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT 75 ± 20 17 10 30 68 14 10 34 11
- 55 to + 175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient Junction-to-Case (Drain)
PCB Mountc
RthJA
85
°C/W
RthJC
4.3
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material)...
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