SQJ968EP

www.vishay.com SQJ968EP Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package 60 0.0336 0.0444 23.5 Dual PowerPAK SO-8L FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Dual D1 D2 6.15 mm 1 Top View 5.13 mm D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Continuous Source Current (Diode Conduction) a TC = 25 °C TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 23.5 13.5 23 72 9 4 42 14 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL RthJA RthJC LIMIT 85 3.5 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The Power...