SQJ952EP

www.vishay.com SQJ952EP Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration PowerPAK® SO-8L Dual 60 0.020 0.024 23 Dual FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 6.15 mm 1 Top View 5.13 mm ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET PowerPAK SO-8L SQJ952EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c, d TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 23 13 23 93 21 22 25 8.3 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 85 °C/W RthJC 6 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). c. See solder profile (www...