Automotive Dual N-Channel MOSFET
www.vishay.com
SQJ910AEP
Vishay Siliconix
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) ...
Description
www.vishay.com
SQJ910AEP
Vishay Siliconix
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration
PowerPAK® SO-8L Dual
30 0.007 0.0086
30 Dual
6.15 mm
D 2
4 G2
3 S2
2 G1 1
S1
Bottom View
D 1
5.13 mm
FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested AEC-Q101 Qualifiedd Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
PowerPAK SO-8L SQJ910AEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
TC = 25 °C TC = 125 °C
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT 30 ± 20 30 30 30 120 29 42 48 16
- 55 to + 175 260
UNIT V
A
mJ W °C
THERMAL RESISIANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient Junction-to-Case (Drain)
PCB Mountc
RthJA
85
°C/W
RthJC
3.1
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 materi...
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