SQJ500AEP

www.vishay.com SQJ500AEP Vishay Siliconix Automotive N- and P-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID (A) Configuration 40 -40 0.0092 0.0270 0.0112 0.0435 30 -30 N- and P-Pair PowerPAK® SO-8L Dual FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization:  For definitions of compliance please see www.vishay.com/doc?99912 D1 S2 6.15 mm 1 5.13 mm Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET PowerPAK SO-8L SQJ500AEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 40 -40 ± 20 30 -30 30 -18 30 -30 120 -120 26.5 -25 35 31 48 48 16 16 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA RthJC 85 3.1 85 °C/W 3.1 ...