Automotive N-Channel MOSFET
www.vishay.com
SQJ422EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 m...
Description
www.vishay.com
SQJ422EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
5.13 mm
Top View
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package
D
1 2S 3S 4S G Bottom View
40 0.0034 0.0043
75 Single PowerPAK SO-8L
FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
G
N-Channel MOSFET S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK® SO-8L
SQJ422EP (for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering recommendations (peak temperature) c
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 40 ± 20 75 62 75 300 46 105 83 27
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case (drain)
PCB mount b
SYMBOL RthJA RthJC
LIMIT 65 1.8
UNIT °C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. When mounted on 1" square PCB (FR4 material) c....
Similar Datasheet