IPD60R180C7

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPD60R180C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™C7PowerTransistor IPD60R180C7 1Description CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features Suitableforhardandsoftswitching(PFCandhighperformanceLLC) IncreasedMOSFETdv/dtruggednessto120V/ns IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency Enablinghighersystemefficiencybylowerswitchinglosses Increasedpowerdensitysolutionsduetosmallerpackages Suitableforapplicationssuchasserver,telecomandsolar Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForM...