SQ3481EV

www.vishay.com SQ3481EV Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration TSOP-6 Top V iew - 30 0.043 0.070 - 7.5 Single (4) S FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC 3 mm 16 25 (3) G 34 2.85 mm Marking Code: 8Exxx ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free (1, 2, 5, 6) D P-Channel MOSFET TSOP-6 SQ3481EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 - 7.5 - 4.3 - 5.2 - 30 - 15 11 4 1.3 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 110 36 UNIT °C/W S11-2124-Rev. B, 07-Nov-11 1 Document Number: 71508 THIS DOCUMENT IS SUBJECT TO CH...