SQ3469EV

www.vishay.com SQ3469EV Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 °C MOSFET TSOP-6 Single S 4 D 5 D 6 3 G 2 D 1 D Top View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration -20 0.036 0.064 -8 Single FEATURES TrenchFET® power MOSFET AEC-Q101 qualified c 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TSOP-6 SQ3469EV (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current VGS TC = 25 °Ca TC = 125 °C ID Continuous source current IS Pulsed drain current a IDM Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation a TC = 25 °C TC = 125 °C PD Operating junction and storage temperature range TJ, Tstg LIMIT -20 ± 20 -8 -5 -6 -32 -17 14 5 1.6 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction to ambient Junction to foot (drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR-4 material) c. Parametric verification ongoing PCB mount b SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S22-0380-Rev. B, 02-May-2022 1 Document Number: 67401 For ...