SQ2389ES

www.vishay.com SQ2389ES Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration -40 0.094 0.188 -4.1 Single FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-23 (TO-236) D 3 S G 1 G Top View Marking Code: 9Axxx 2 S P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2389ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C PD TJ, Tstg LIMIT -40 ± 20 -4.1 -2.4 -3.6 -16 -12 7.2 3 1 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mount b Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJF LIMIT 166 50 UNIT °C/W S15-0166-Rev. A, 02-Feb-15 1 Document Number: 63248 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJEC...