SQ1563AEH

www.vishay.com SQ1563AEH Vishay Siliconix N-and P-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) (Ω) at VGS = ± 4.5 V RDS(on) (Ω) at VGS = ± 2.5 V RDS(on) (Ω) at VGS = ± 1.8 V ID (A) Configuration 20 -20 0.280 0.490 0.360 0.750 0.450 1.100 0.85 -0.85 N & P Pair Package SC-70 SOT-363 SC-70 Dual (6 leads) S2 G2 4 D1 5 6 FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified c Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 S2 G2 G1 Marking Code: 9Q 1 S1 Top View 2 G1 3 D2 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 20 -20 ±8 0.85 -0.85 0.85 -0.79 0.85 -0.85 3.3 -3.3 3.5 -1.4 0.6 0.1 1.5 1.5 0.5 0.5 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). PCB mount b SYMBOL RthJA RthJF N-CHANNEL 220 100 P-CHANNEL 22...