Dual N-Channel MOSFET
New Product
SMMB912DK
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = ...
Description
New Product
SMMB912DK
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A)a Configuration
20 0.216 0.268 0.375
1.5 Dual
PowerPAK SC75-6L-Dual
D1 D2
1 S1
D1
D1
6 G2
5 1.60 mm
S2 4
2 G1 D2
3 D2 1.60 mm
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
Marking Code
Part # code
MBX XXX
Lot Traceability and Date code
FEATURES High Quality Manufacturing Process Using SMM
Process Flow Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75
Package - Small Footprint Area 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC Find out more about Vishay’s Medical Products at: www.vishay.com/medical-mosfets
APPLICATION EXAMPLES
Medical Implantable Applications Including - Drug Delivery Systems - Defibrillators - Pacemakers - Hearing Aids - Other Implantable Devices
Load Switch, PA Switch and Battery Switch for Portable Devices
DC/DC Converter
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
PowerPAK SC-75 SMMB912DK-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)
TC = 25 °Ca TC = 70 °Ca TA = 25 °Cb, c TA = 70 °Cb, c
VGS ID
Pulsed Drain Current Continuous Source-Drain Diode Current
TC = 25 °Ca TA = 25 °Cb, c
IDM IS
TC = 25 °C
Maximum Power Diss...
Similar Datasheet