SI3483DV

P-Channel 30-V (D-S) MOSFET Si3483DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.035 @ VGS = −10 V −30 0.053 @ VGS = −4.5 V ID (A) −6.2 −5.0 FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3483DV-T1—E3 (Lead Free) (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS −30 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg −6.2 −4.7 −4.9 −3.7 −25 −1.7 −0.95 2.0 1.14 1.3 0.73 −55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72078 S-40238—Rev. B, 16-Feb-04 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W www.vishay.com 1 Si3483DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS ID...