Document
UNISONIC TECHNOLOGIES CO., LTD
UP1855A
PNP SILICON TRANSISTOR
HIGH CURRENT TRANSISTOR
FEATURES
* High current switching * Low VCE(SAT) * High hFE
1 SOT-223
1 TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- UP1855AG-x-AA3-R
UP1855AL-x-T60-K
UP1855AG-x-T60-K
Note: Pin Assignment: E: Emitter B: Base C: Case
Package
SOT-223 TO-126
Pin Assignment 123 BCE ECB
Packing
Tape Reel Bulk
MARKING
SOT-223
TO-126
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R207-020.F
UP1855A
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-180
V
Collector -Emitter Voltage
VCEO
-170
V
Emitter -Base Voltage
VEBO -6 V
Collector Current (Pulse)
ICM -10 A
Collector Current (DC)
IC -4 A
Power Dissipation
SOT-223 TO-126
PD
1 W
1
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC = -100µA
Collector-Emitter Breakdown Voltage BVCEO IC = -10mA
Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
BVEBO ICBO IEBO
IE = -100µA VCB=-150V VCB=-150V, Ta=100°C VEB=-6V
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=-100mA, IB=-5mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-3A, IB=-300mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage
VBE (SAT) IC=-3A, IB=-300mA VBE (ON) IC=-3A, VCE=-5V
DC Current Gain
hFE1 hFE2 hFE3 hFE4
IC=-10mA, VCE=-5V IC=-1A, VCE=-5V IC=-3A, VCE=-5V IC=-10A, VCE=-5V
Transition Frequency Output Capacitance
fT IC=-100mA, VCE=-10V, f=50MHz Cob VCB=-20V, f=1MHz
Switching Times
tON tOFF
Note: Pulse test: tP ≤ 300µs, Duty cycle ≤2%
IC=-1A, VCC=-50V IB1=-100mA, IB2=100mA
CLASSIFICATION OF hFE3
RANK RANGE
A 28~75
MIN -180 -170
-6
100 100 28
TYP -210
-8
-30 -70 -110 -275 -970 -830 200
140 10 110 40 68 1030
MAX
-50 -1 -10 -60 -120 -150 -550 -1110 -950
300
UNIT V V V nA µA nA mV mV mV mV mV mV
MHz pF ns ns
B 75(MIN.)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage VBE(SAT) (V)
Collector-Emitter Saturation Voltage VCE(SAT) (V)
DC Current Gain, hFE
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, Ic (A)
Collector-Emitter Saturation Voltage VCE(SAT) (V)
Base-Emitter Turn-on Voltage, VBE(ON) (V)
PNP SILICON TRANSISTOR
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QW-R207-020.F
UP1855A
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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