IPB407N30N

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPB407N30N DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features N-channel,normallevel FastDiodewithreducedQrr Optimizedforhardcommutationruggedness Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 40.7 mΩ ID 44 A OptiMOSTMPower-Transistor,300V IPB407N30N D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB407N30N Package PG-TO 263-3 Marking 407N30N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-27 OptiMOSTMPower-Transistor,300V IPB407N30N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....