BUK724R5-30C

BUK724R5-30C N-channel TrenchMOS standard level FET Rev. 01 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tj = 25 °C; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V; Tj = 25 °C; see Figure 14 Min Typ Max Unit - - 30 V [1] - - 75 A - - 157 W - 3.8 4.5 mΩ - - 329 mJ - 21 - nC NXP Semiconductor...