BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 14 October 2010
Product data sheet
1. Product profi...
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 14 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate
drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power
steering Motors, lamps and solenoid control
Start-Stop micro-hybrid applications Transmission control Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11
Min Typ Max Unit - - 30 V [1] - - 100 A - - 204 W
- 2.4 2.8 mΩ
NXP Semiconductors
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dyn...