DatasheetsPDF.com

P2H7M440L Dataheets PDF



Part Number P2H7M440L
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description MOSFET
Datasheet P2H7M440L DatasheetP2H7M440L Datasheet (PDF)

MOSFET 50A 450~500V PD7M441L PD7M440L P2H7M441L P2H7M440L PD7M441L/440L P2H7M441L/440L 108.0 108.0 Approximate Weight :220g Maximum Ratings Approximate Weight :220g Rating Drain-Source Voltage Symbol VDSS PD7M441L/P2H7M441L 450 VGS=0V Grade PD7M440L/P2H7M440L 500 Unit V Gate-Source Voltage Continuous Drain Current Duty=50% D.C. VGSS ID 20 50 c=25 35 c=25 V A Pulsed Drain Current IDM 100 c=25 A Total Power Dissipation PD 350 c=25 W Operating Junction Temperature Range .

  P2H7M440L   P2H7M440L


Document
MOSFET 50A 450~500V PD7M441L PD7M440L P2H7M441L P2H7M440L PD7M441L/440L P2H7M441L/440L 108.0 108.0 Approximate Weight :220g Maximum Ratings Approximate Weight :220g Rating Drain-Source Voltage Symbol VDSS PD7M441L/P2H7M441L 450 VGS=0V Grade PD7M440L/P2H7M440L 500 Unit V Gate-Source Voltage Continuous Drain Current Duty=50% D.C. VGSS ID 20 50 c=25 35 c=25 V A Pulsed Drain Current IDM 100 c=25 A Total Power Dissipation PD 350 c=25 W Operating Junction Temperature Range Tjw 40 +150 Storage Temperature Range RMS Isolation Voltage Mountin1g Torque Tstg Viso - Ftor 3.0 2.0 40 +125 2000 ,AC1 Terminals to Base, AC 1 min . Module Base to Heat sink Bus bar to Main Terminals V Nm Fig. 1 Typical Output Characteristics 80 TC=25ı 250 s Pulse Test 10V 6V 60 Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage 80 VDS=50V 250 s Pulse Test 60 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature 8 TC=25ı 250 s Pulse Test 6 ID=50A DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) Tj=25ı 40 40 4 125ı VGS=5V 20 20 2 25A 15A 0 4V 0 2 4 6 8 10 12 DRAIN TO SOURCE VOLTAGE VDS (V) Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 18 VGS=0V f=1kHz 15 12 Ciss 0 02468 GATE TO SOURCE VOLTAGE VGS (V) Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 16 ID=35A VDD= 100V 250V 400V 12 0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V) Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 10 ID=25A VDD=250V TC=25ı 80 s Pulse Test 5 2 SWITCHING TIME t ( s) GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 9 Coss 6 Crss 3 8 4 1 0.5 toff ton 0.2 0 12 5 10 20 50 100 DRAIN TO SOURCE VOLTAGE VDS (V) Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 RG=7 VDD=250V TC=25ı 80 s Pulse Test 500 td(off) 200 td(on) 100 tr 50 tf SWITCHING TIME t (ns) 20 10 12 5 10 20 Fig. 10 Maximum Safe Operating Area 50 100 0 0 80 160 240 320 400 480 TOTAL GATE CHRAGE Qg (nC) Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics 120 250 s Pulse Test 100 80 0.1 2 5 10 20 50 100 200 SERIES GATE IMPEDANCE RG ( ) Fig. 9 Typical Reverse Recovery Characteristics 2000 IS=50A IS=25A Tj=150ı 1000 500 trr REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) SOURCE CURRENT IS (A) 60 200 40 Tj=125ı Tj=25ı 100 20 50 IR 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE VSD (V) Fig. 11 Normalized Transient Thermal impedance(MOSFET) 0 100 200 300 400 500 600 -dis/dt (A/ s) DRAIN CURRENT ID (A) 200 TC=25ı Tj=150ıMAX Single Pulse Operation in this area is limited by RDS (on) 100 10 s 50 100 s 20 10 1ms 5 2 1 0.5 0.2 1 10ms DC -441L -440L 2 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 2 100 5 2 10-1 5 Per Unit Base Rth(j-c)=0.36ı/W 2 1 Shot Pulse 10-2 10 -5 10-4 10-3 10-2 10-1 100 101 PULSE DURATION t (s) - 305 - .


P2H7M441L P2H7M440L PDM505HA


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)