Document
MOSFET 50A 450~500V
PD7M441L PD7M440L P2H7M441L P2H7M440L
PD7M441L/440L
P2H7M441L/440L
108.0
108.0
Approximate Weight :220g Maximum Ratings
Approximate Weight :220g
Rating
Drain-Source Voltage
Symbol VDSS
PD7M441L/P2H7M441L 450
VGS=0V
Grade PD7M440L/P2H7M440L
500
Unit V
Gate-Source Voltage Continuous Drain Current
Duty=50% D.C.
VGSS ID
20
50 c=25 35 c=25
V A
Pulsed Drain Current
IDM
100 c=25
A
Total Power Dissipation
PD
350 c=25
W
Operating Junction Temperature Range
Tjw
40 +150
Storage Temperature Range
RMS Isolation Voltage
Mountin1g Torque
Tstg
Viso -
Ftor
3.0 2.0
40 +125
2000
,AC1
Terminals to Base, AC 1 min .
Module Base to Heat sink
Bus bar to Main Terminals
V Nm
Fig. 1 Typical Output Characteristics
80 TC=25ı 250 s Pulse Test 10V 6V
60
Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage
80 VDS=50V 250 s Pulse Test
60
Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature
8 TC=25ı 250 s Pulse Test
6 ID=50A
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
Tj=25ı
40 40
4
125ı
VGS=5V 20 20
2
25A 15A
0 4V 0 2 4 6 8 10 12 DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage
18 VGS=0V f=1kHz
15
12 Ciss
0 02468 GATE TO SOURCE VOLTAGE VGS (V)
Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage
16 ID=35A VDD= 100V 250V 400V
12
0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V)
Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance
10 ID=25A VDD=250V TC=25ı 80 s Pulse Test
5
2
SWITCHING TIME t ( s)
GATE TO SOURCE VOLTAGE VGS (V)
CAPACITANCE C (nF)
9 Coss
6
Crss 3
8 4
1
0.5 toff ton
0.2
0 12
5 10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current
1000
RG=7 VDD=250V TC=25ı 80 s Pulse Test
500
td(off) 200
td(on) 100
tr 50 tf
SWITCHING TIME t (ns)
20 10
12
5 10 20
Fig. 10 Maximum Safe Operating Area
50 100
0 0 80 160 240 320 400 480 TOTAL GATE CHRAGE Qg (nC)
Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics
120 250 s Pulse Test
100
80
0.1 2
5 10 20
50 100 200
SERIES GATE IMPEDANCE RG ( )
Fig. 9 Typical Reverse Recovery Characteristics
2000
IS=50A IS=25A Tj=150ı
1000 500
trr
REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A)
SOURCE CURRENT IS (A)
60
200
40
Tj=125ı
Tj=25ı
100
20 50
IR
0 0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE VSD (V)
Fig. 11 Normalized Transient Thermal impedance(MOSFET)
0
100 200 300 400 500 600 -dis/dt (A/ s)
DRAIN CURRENT ID (A)
200
TC=25ı Tj=150ıMAX Single Pulse Operation in this area
is limited by RDS (on) 100
10 s
50
100 s 20
10 1ms
5
2 1 0.5
0.2 1
10ms
DC
-441L -440L 2 5 10 20 50 100 200 500 1000
DRAIN TO SOURCE VOLTAGE VDS (V)
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
2 100
5
2
10-1
5 Per Unit Base Rth(j-c)=0.36ı/W
2 1 Shot Pulse
10-2 10
-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
- 305 -
.