MJE13009-Q

UNISONIC TECHNOLOGIES CO., LTD MJE13009-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13009-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications.  FEATURES * VCEO(SUS) 400V * 700V Blocking Capability  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13009L-Q-TA3-T MJE13009G-Q-TA3-T Note: Pin Assignment: E: Emitter C: Collector Package TO-220 B: Base Pin Assignment 123 BCE Packing Tube MJE13009L-Q-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R223-026.a MJE13009-Q Preliminary NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Sustaining Voltage VCEO 400 V Collector-Emitter Breakdown Voltage VCBO 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current Continuous Peak (1) IC ICM 8.0 A 16 A Base Current Continuous Peak (1) IB IBM 4.0 A 8.0 A Emitter Current Continuous Peak (1) IE IEM 12 A 24 A Power Dissipation (TC = 25°C) PD 80 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permane...