MJE13003-R

UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-R-x-T92-B MJE13003G-R-x-T92-B MJE13003-L-R-x-T92-K MJE13003G-R-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Package TO-92 TO-92 Pin Assignment 123 BCE BCE Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R221-022.A MJE13003-R NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS Collector-Emitter Voltage VCEO(SUS) 400 Collector-Base Voltage VCBO 700 Emitter Base Voltage VEBO 9 Collector Current Continuous Peak (1) IC ICM 1.5 3 Base Current Continuous Peak (1) IB IBM 0.75 1.5 Emitter Current Continuous Peak (1) IE IEM 2.25 4.5 Power Dissipation TA=25°C TC=25°C PD 1.1 1.5 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are...