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BUK7909-75AIE Dataheets PDF



Part Number BUK7909-75AIE
Manufacturers NXP
Logo NXP
Description N-channel TrenchPLUS standard level FET
Datasheet BUK7909-75AIE DatasheetBUK7909-75AIE Datasheet (PDF)

BUK7909-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 .

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BUK7909-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Reduced component count due to integrated current sensor „ Suitable for standard level gate drive sources 1.3 Applications „ Electrical Power Assisted Steering (EPAS) „ Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 75 V ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 120 A see Figure 2; see Figure 3 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 - 8 9 mΩ ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C; to sense current VGS > 10 V 450 500 550 [1] Current is limited by power dissipation chip rating. NXP Semiconductors BUK7909-75AIE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2 ISENSE sense current 3D drain 4 KS Kelvin source 5S source mb D mounting base; connected to drain Simplified outline mb Graphic symbol d g MBL368 s Isense Kelvin source 3. Ordering information 12345 SOT263B (TO-220) Table 3. Ordering information Type number Package Name Description BUK7909-75AIE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 Version SOT263B BUK7909-75AIE_2 Product data sheet Rev. 02 — 17 February 2009 © NXP B.V. 2009. All rights reserved. 2 of 13 NXP Semiconductors BUK7909-75AIE N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 [1] [2] IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 1 continuous pulsed; tp = 5 ms; δ 0.01 [2] IS source current Tmb = 25 °C ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy [1] [2] Electrostatic discharge Vesd electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ Min -20 -55 -55 - - - [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Max Unit 75 V 75 V 20 V 120 A 75 A 75 A 480 A 272 W 10 mA 50 mA 175 °C 175 °C 120 A 75 A 480 A 739 mJ 6 kV BUK7909-75AIE_2 Product data sheet Rev. 02 — 17 February 2009 © NXP B.V. 2009. All rights reserved. 3 of 13 NXP Semiconductors BUK7909-75AIE N-channel TrenchPLUS standard level FET 120 Pder (%) 80 40 03na19 120 ID (A) 80 Capped at 75 A due to package 40 03ni95 0 0 50 100 150 200 Tmb (°C) Fig 1. Normalized total power dissipation as a function of mounting base temperature 103 ID (A) Limit RDSon = VDS/ID 102 Capped at 75 A due to package 10 DC 1 1 10 0 0 50 100 150 200 Tmb (°C) Fig 2. Continuous drain current as a function of mounting base temperature 03ni96 tp = 10 μs 100 μs 1 ms 10 ms 100 ms 102 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7909-75AIE_2 Product data sheet Rev. 02 — 17 February 2009 © NXP B.V. 2009. All rights reserved. 4 of 13 NXP Semiconductors 5. Thermal characteristics Table 5. Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter Conditions thermal resistance from vertical in still air junction to ambient thermal resistance from see Figure 4 junction to mounting base BUK7909-75AIE N-channel TrenchPLUS standard level FET Min Typ Max Unit - 60 - K/W - - 0.55 K/W 1 Z th(j-mb) (K/W) δ = 0.5 10-1 10-2 0.2 0.1 0.05 0.02 single shot 10-3 10-6 10-5 10-4 10-3 10-2 03ni64 P δ = tp T 10-1 tp T t 1 tp(s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7909-75AIE_2 Product data sheet Rev. 02 — 17 February 2009 © NXP B.V. 2009. All rights reserved. 5 of 13 NXP Semiconductors BUK7909-.


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