Document
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to integrated protection diodes
Low conduction losses due to low on-state resistance
Q101 compliant
Reduced component count due to integrated current sensor
Suitable for standard level gate drive sources
1.3 Applications
Electrical Power Assisted Steering (EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 75 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 120 A see Figure 2; see Figure 3
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8
- 8 9 mΩ
ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C;
to sense current
VGS > 10 V
450 500 550
[1] Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2 ISENSE sense current
3D
drain
4 KS Kelvin source
5S
source
mb D
mounting base; connected to drain
Simplified outline
mb
Graphic symbol
d
g
MBL368
s
Isense
Kelvin source
3. Ordering information
12345
SOT263B (TO-220)
Table 3. Ordering information
Type number
Package
Name
Description
BUK7909-75AIE TO-220
plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
Version SOT263B
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
2 of 13
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGS VGS ID
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 [1] [2]
IDM Ptot IGS(CL)
peak drain current
total power dissipation
gate-source clamping current
Tstg storage temperature Tj junction temperature Source-drain diode
Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 1 continuous pulsed; tp = 5 ms; δ 0.01
[2]
IS source current Tmb = 25 °C
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
[1] [2]
Electrostatic discharge
Vesd electrostatic discharge voltage
HBM; C = 100 pF; R = 1.5 kΩ
Min -20 -55 -55
-
-
-
[1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package.
Max Unit 75 V 75 V 20 V 120 A 75 A 75 A 480 A 272 W 10 mA 50 mA 175 °C 175 °C
120 A 75 A 480 A
739 mJ
6 kV
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
3 of 13
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
120 Pder (%)
80
40
03na19
120 ID (A)
80
Capped at 75 A due to package 40
03ni95
0 0 50 100 150 200 Tmb (°C)
Fig 1. Normalized total power dissipation as a function of mounting base temperature
103
ID (A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package 10
DC
1 1 10
0 0 50 100 150 200 Tmb (°C)
Fig 2. Continuous drain current as a function of mounting base temperature
03ni96
tp = 10 μs 100 μs 1 ms 10 ms 100 ms
102 VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
NXP Semiconductors
5. Thermal characteristics
Table 5. Symbol Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from vertical in still air junction to ambient
thermal resistance from see Figure 4 junction to mounting base
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Min Typ Max Unit - 60 - K/W - - 0.55 K/W
1
Z th(j-mb) (K/W)
δ = 0.5
10-1 10-2
0.2 0.1 0.05 0.02
single shot
10-3 10-6
10-5
10-4
10-3
10-2
03ni64
P
δ
=
tp T
10-1
tp T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
NXP Semiconductors
BUK7909-.