13003DE

UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable for electronic ballasts and the general power switch circuit, etc. „ FEATURES * High collector-base breakdown voltage * High reliability * Low reverse leakage current „ EQUIVALENT CIRCUIT C B E „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 13003DEL-x-T92-A-K 13003DEG-x-T92-A-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-126 TO-92 TO-92 Pin Assignment 123 BCE ECB ECB 13003DEL-T60-F-B (1)Packing Type (1) B: Bluk, K: Bulk (2)Pin Assignment (3)Package Type (4)Lead Free (2) refer to Pin Assignment (3) T60: TO-126, T92: TO-92 (4) L: Lead Free, G: Halogen Free „ MARKING TO-126 TO-92 Packing Bulk Tape Box Bulk www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R223-013.c 13003DE Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 600 V VCEO 400 V Emitter-Base Voltage Continuous Collector Current VEBO 9 V IC 1.3...