IDM08G120C5

Diode Silicon Carbide Schottky Diode IDM08G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-07-22 Industrial Power Control SiC Schottky Diode IDM08G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI  Related Links: www.infineon.com/sic 1 2 Applications  Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type IDM08G120C5 VDC 1200V IF 8A 1) J-STD20 and JESD22 Final Data Sheet QC 28nC Tj,max Marking 175°C D0812C5 Package PG-TO252-2 2 Rev. 2.0, 2015-07-22 IDM08G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Table of Contents Description…. ................................