MRF373R1

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc D Excellent Thermal Stability 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. G S MRF373R1 MRF373SR1 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS CASE 360B–05, STYLE 1 NI–360 MRF373R1 CASE 360C–05, STYLE 1 NI–360S MRF373SR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MRF373SR1 Symbol VDSS VGS ID PD Tstg T...