Technical Data TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltag...
Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
400.0 V 200.0 V
10.0 V 6.0 A 3.0 A
87.5 W 2.0 °C/W
200.0 °C empty empty
NO. TYPE empty empty CASE empty empty
184T2C
NPN empty empty TO-3 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 50.0 mA
(1) 200.0
-
V
2. BVCBO
IE = 3.0 mA
(1) 400.0
-
V
3. ICEO
VCE = 200.0 V
- 1.0 mA
4. ICES
VCE = 300.0 V
- 1.0 mA
5. IEBO
VEB = 10.0 V
- 1.0 mA
6. hFE
IC = 2.0 A, VCE = 4.0 V
(1) 75.0
180.0
-
7. VCE(SAT) IC = 2.0 A, IB = 250.0 mA
(1) - 0.6 V
8. VBE(SAT) IC = 2.0 A, IB = 250.0 mA
(1) - 1.2 V
9. fT
VCE = 15.0 V, IC = 0.5 A, f = 10.0 MHz
10.0 - MHz
10. t(ON)
IC = 5.0 A, IB = 1.0 A
- 1.0 µs
11. tOFF
IC = 5.0 A, IB = 1.0 A
- 6.0 µs
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty
DIMENSIONS in mm
Marking 184T2C Customer GENERAL PURPOSE
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