OptiMOS™-T Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175...
OptiMOS™-T Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPB17N25S3-100 IPP17N25S3-100
Product Summary VDS RDS(on),max ID
250 V 100 mΩ 17 A
PG-TO263-3-2 PG-TO220-3-1
Type IPB17N25S3-100 IPP17N25S3-100
Package PG-TO263-3-2 PG-TO220-3-1
Marking 3N25100 3N25100
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol
Conditions
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25°C I D=5.4A
Avalanche current, single pulse
I AS -
Reverse diode dv /dt
dv /dt -
Gate source voltage Power dissipation Operating and storage temperature
V GS
-
P tot T C=25°C
T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
17
13.3
68 54 5.4 6 ±20 107 -55 ... +175 55/175/56
Unit A
mJ A kV/µs V W °C
Rev. 1.1
page 1
2013-05-13
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint 6 cm2 cooling area2)
IPB17N25S3-100 IPP17N25S3-100
min.
Values typ.
Unit max.
- - 1.4 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
250 -...
