Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor IPx60R230P6
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor IPW60R230P6,IPB60R230P6,IPP60R230P6,
IPA60R230P6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
TO-247 TO-220FP
Features
•IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
D²PAK
tab
2 1
3
TO-220
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max
650 230
V mΩ
Qg.typ
31
nC
ID,pulse
48
A
Eoss@400V
4.2
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode IPW60R230P6 IPB60R230P6 IPP60R230P6 IPA60R230P6
Package PG-TO 247 PG-TO 263 PG-TO 220 PG-TO 220 FullPAK
Marking 6R230P6
RelatedLinks see Appendix A
Final Data Sheet
2 Rev.2.2,2015-07-10
600VCoolMOS™P6PowerTransistor IPW60R230P6,IPB60R230P6,IPP60R230P6,
IPA60R230P6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet
3 Rev.2.2,2015-07-10
600VCoolMOS™P6PowerTransistor IPW60R230P6,IPB60R230P6,IPP60R230P6,
IPA60R230P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation (Non FullPAK) TO-220, TO-263, TO-247
Power dissipation (FullPAK) TO-220FP Storage temperature Operating junction temperature Mounting torque (Non FullPAK) TO-220, TO-247
Mounting torque (FullPAK) TO-220FP Continuous diode forward current Diode pulse current2)
Reverse diode dv/dt3)
ID ID,pulse EAS EAR IAR dv/dt VGS VGS Ptot
Ptot Tstg Tj
-
IS IS,pulse
dv/dt
Maximum diode commutation speed
Insulation withstand voltage for TO-220FP
dif/dt VISO
Min. -20 -30
-
Values Typ. Max. - 16.8 - 10.7 - 48 - 352 - 0.53 - 2.9 - 100 - 20 - 30
- 126
Unit Note/TestCondition
A
TC=25°C TC=100°C
A TC=25°C
mJ ID=2.9A; VDD=50V; see table 12
mJ ID=2.9A; VDD=50V; see table 12
AV/ns VDS=0...400V
V static;
V AC (f>1 Hz)
W TC=25°C
--55 -55 --
33 W TC=25°C 150 °C 150 °C 60 Ncm M3 and M3.5 screws
- - 50 Ncm M2.5 screws
- - 14.5 A TC=25°C
- - 48 A TC=25°C
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C see ta.