SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW24G65C5B
Final Datasheet
Rev. 2.0, 2015-04-...
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC
Schottky Diode
IDW24G65C5B
Final Datasheet
Rev. 2.0, 2015-04-13
Power Management & Multimarket
5th Generation thinQ!™ SiC
Schottky Diode
1 Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 9 mA2)3) Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterrup...