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BSC050N03LSG Dataheets PDF



Part Number BSC050N03LSG
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet BSC050N03LSG DatasheetBSC050N03LSG Datasheet (PDF)

OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC050N03LS G Product Summary VDS RDS(on),max ID 30 5 80 PG-TDSON-8 V mW A Type BSC050N03LS G .

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC050N03LS G Product Summary VDS RDS(on),max ID 30 5 80 PG-TDSON-8 V mW A Type BSC050N03LS G Package PG-TDSON-8 Marking 050N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Value 80 51 Unit A Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W2) I D,pulse I .


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