Document
UFT800A ... UFT800J
UFT800A ... UFT800J
Superfast Efficient Rectifiers – Single Diode Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode
Version 2011-10-17
1.2±0.2 4.5±0.2
14.9±0.4
10.1±0.3
Ø 3.8±0.2 4
Type Typ
13
2.8±0.3
4
8.7±0.3 3.9±0.3
2.67±0.2 0.42±0.4
13.9±0.3
1.3±0.1 0.8±0.2
1
5.08±0.1
Dimensions - Maße [mm]
3
Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen
8A 50...600 V TO-220AC
1.8 g
Maximum ratings and Characteristics
Type Typ
Repetitive peak reverse voltage Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage Stoßspitzensperrspannung
VRSM [V]
UFT800A UFT800B UFT800C UFT800D UFT800F UFT800G UFT800H UFT800J
50 100 150 200 300 400 500 600
50 100 150 200 300 400 500 600
Grenz- und Kennwerte
Forward voltage Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 8 A
< 0.9
< 1.0
< 0.9
< 1.0
< 0.9
< 1.0
< 0.9
< 1.0
< 1.15
< 1.25
< 1.15
< 1.25
< 1.6
< 1.75
< 1.6
< 1.75
Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
TC = 100°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj TS
8A 22 A 2) 112/125 A 62 A2s -50...+150°C -50...+175°C
1 Tj = 25°C 2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
Characteristics Type Typ
Tj = 25°C UFT800A ... UFT800D UFT800F ... UFT800J
Reverse recovery time Sperrverzugszeit trr [ns] 1) < 25 < 35
UFT800A ... UFT800J
Kennwerte Reverse recovery time
Sperrverzugszeit trr [ns] 2) < 35 < 45
Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse
Tj = 25°C VR = VRRM
IR RthC
< 10 µA < 2.5 K/W
120 [%] 100
80
60
40
20 IFAV
0 0 TC 50 100 150 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
102
[A] 10
Tj = 125°C
1 Tj = 25°C
10-1
IF
10-2
200a-(5a-0.95v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A 2 IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V
2 http://www.diotec.com/
© Diotec Semiconductor AG
.