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TF215

Unisonic Technologies

JFET

UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF...


Unisonic Technologies

TF215

File Download Download TF215 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.  FEATURES * Good voltage characteristics and transient characteristics. JFET  ORDERING INFORMATION Ordering Number TF215G-x-AN3-R Note: Pin Assignment: S: Source D: Drain G: Gate Package SOT-523 Pin Assignment 123 SDG Packing Tape Reel  MARKING TF215-E3 E3 TF215-E4 E4 TF215-E5 E5 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-096.c TF215 Preliminary JFET  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Drain Voltage VGDO -20 V Gate Current IG 10 mA Drain Current ID 1 mA Power Dissipation PD 100 mW Junction Temperature TJ 150 °С Storage Temperature TSTG -55~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER G-D Breakdown Voltage Gate Off Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Input Resistance Output Resistance Total Harmonic Distortion Output Noise Voltage SY...




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