UG9J

UNISONIC TECHNOLOGIES CO., LTD UG9J Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC UG9J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc. The UTC UG9J is suitable for switching, inverter circuit and driver circuit applications.  FEATURES * Low collector-emitter saturation voltage * With built-in bias resistors * Simplify circuit design  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Package UG9JG-AL5-R SOT-353 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 12345 B1 E B2 C2 C1 UG9JG-AL5-R (1)Packing Type (1) R: Tape Reel (2)Package Type (3)Green Package (2) AL5: SOT-353 (3) G: Halogen Free and Lead Free Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-025.a UG9J Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 50 V VCEO 50 V Emitter-Base Voltage Collector Current VEBO IC 10 V 100 mA Collector Power Dissipation (Total rating) Junction Temperature PC TJ 200 mW 150 °C Storage Temperature TSTG -55 ~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and fun...