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UG25N45 Dataheets PDF



Part Number UG25N45
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description NPN SILICON TRANSISTOR
Datasheet UG25N45 DatasheetUG25N45 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance * Very high pick current capability * Gate drive: 4.5V „ SYMBOL Lead-free: UG25N45L Halogen-free: UG25N45G „ ORDERING INFORMATION Normal UG25N45-TA3-T Ordering Number Lead Free UG25N45L-TA3-T Halogen Free UG25N45G-TA3-T Package TO.

  UG25N45   UG25N45


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UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance * Very high pick current capability * Gate drive: 4.5V „ SYMBOL Lead-free: UG25N45L Halogen-free: UG25N45G „ ORDERING INFORMATION Normal UG25N45-TA3-T Ordering Number Lead Free UG25N45L-TA3-T Halogen Free UG25N45G-TA3-T Package TO-220 Pin Assignment 123 GCE Packing Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-037.a UG25N45 Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Current Pulsed Collector Current Power Dissipation @ TC=25°C Junction Temperature Operating Temperature Storage Temperature VCEO VGEO IGEP ICP PD TJ TOPR TSTG 450 ±6 ±8 150 2.5 +150 -55 ~ +150 -55 ~ +150 V V A A W °C °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL θJA MIN TYP MAX 50 UNIT ℃/W „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current ON CHARACTERISTICS Gate Threshold Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge SYMBOL TEST CONDITIONS VCE(SAT) ICES IGES VGE=4.5V, ICP=150A (Pulsed) VCE=450V, VGE=0 V VGE=±6V, VCE=0V VGE(TH) VCE=VGE, IC=250uA CIES COES CRES VGE=0V, VCE=25V, f=1.0MHz tD(ON) tR tD(OFF) tF QG QGE QGC VCC=225V, IC =50A, RG=25Ω, VGE=10V VCE=360V, VGE=4.5V, IC=50A MIN TYP MAX UNIT 6 8V 10 10 uA 0.35 1.2 V 2227 200 79 pF pF pF 11.5 ns 24.5 ns 150 ns 3.3 ns 64.5 nC 7 nC 30 nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R203-037.a UG25N45 Preliminary „ TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Application Test Circuit UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R203-037.a .


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