Document
UNISONIC TECHNOLOGIES CO., LTD
UG25N45
Preliminary
NPN SILICON TRANSISTOR
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
DESCRIPTION
UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications
FEATURES
* Very high input impedance * Very high pick current capability * Gate drive: 4.5V
SYMBOL
Lead-free: UG25N45L Halogen-free: UG25N45G
ORDERING INFORMATION
Normal UG25N45-TA3-T
Ordering Number Lead Free
UG25N45L-TA3-T
Halogen Free UG25N45G-TA3-T
Package TO-220
Pin Assignment 123 GCE
Packing Tube
www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd
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UG25N45
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Current Pulsed Collector Current Power Dissipation @ TC=25°C Junction Temperature Operating Temperature Storage Temperature
VCEO VGEO IGEP ICP
PD TJ TOPR TSTG
450 ±6 ±8 150 2.5 +150 -55 ~ +150 -55 ~ +150
V V A A W °C °C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient
SYMBOL θJA
MIN
TYP
MAX 50
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current
ON CHARACTERISTICS Gate Threshold Voltage
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
SYMBOL
TEST CONDITIONS
VCE(SAT) ICES IGES
VGE=4.5V, ICP=150A (Pulsed) VCE=450V, VGE=0 V VGE=±6V, VCE=0V
VGE(TH) VCE=VGE, IC=250uA
CIES COES CRES
VGE=0V, VCE=25V, f=1.0MHz
tD(ON) tR
tD(OFF) tF QG
QGE QGC
VCC=225V, IC =50A, RG=25Ω, VGE=10V
VCE=360V, VGE=4.5V, IC=50A
MIN TYP MAX UNIT
6 8V
10 10
uA
0.35 1.2 V
2227 200 79
pF pF pF
11.5 ns 24.5 ns 150 ns 3.3 ns 64.5 nC
7 nC 30 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3 QW-R203-037.a
UG25N45
Preliminary
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Application Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3 QW-R203-037.a
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