Type
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology fo...
Type
OptiMOSTM3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
BSC067N06LS3 G
BSC067N06LS3 G
Product Summary VDS RDS(on),max ID
60 V 6.7 mW 50 A
Package
PG-TDSON-8
Marking
067N06LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value 50 50
Unit A
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
50 37
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
15
Pulsed drain current3)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
47 mJ
Gate sourc...
