BSC060P03NS3EG

OptiMOSTM P3 Power-Transistor Features single P-Channel in SuperSO8 Qualified according JEDEC1) for target applications 150 °C operating temperature 100% Avalanche rated V GS=25 V, specially suited for notebook applications ESD protected Pb-free; RoHS compliant applications: battery management, load switching Halogen-free according to IEC61249-2-21 BSC060P03NS3E G Product Summary V DS R DS(on),max ID -30 V 6.0 mΩ -100 A PG-TDSON-8 Type Package Marking Lead free BSC060P03NS3E G PG-TDSON-8 060P3NSE Yes Halogen free Yes Maximum ratings, at T j=25 °C, unless otherwise specified Packing non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature I D T C=25 °C T C=70 °C T A=25 °C I D,pulse T C=25 °C2) E AS I D=-50 A, R GS=25 Ω V GS P tot T C =25 °C T A=25 °C2) T j, T stg ESD class JESD22-A114 HBM Soldering temperature IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Value -100 -82.0 17.7 -200 149 ±25 83 2.5 -55 ... 150 class 3 (> 4 kV) 260 55/150/56 Unit A mJ V W °C °C Rev. 2.1 page 1 2009-11-16 Parameter Thermal characteristics Symbol Conditions BSC060P03NS3E G min. Values typ. Unit max. Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) - - 1.5 K/W - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characte...