Document
BSC030N08NS5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
3.0
mΩ
ID 100 A
Qoss
73
nC
QG(0V..10V)
61
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC030N08NS5
Package PG-TDSON-8
Marking 030N08NS
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.3,2019-10-31
OptiMOSTM5Power-Transistor,80V
BSC030N08NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.3,2019-10-31
OptiMOSTM5Power-Transistor,80V
BSC030N08NS5
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation
Operating and storage temperature
ID
ID,pulse EAS VGS Ptot
Tj,Tstg
Min.
-
-20
-
-55
Values Typ. Max.
- 100 - 100 - 22
- 400 - 250 - 20
- 139 - 2.5
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C A VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=50K/W1)
A TC=25°C mJ ID=50A,RGS=25Ω
V-
W
TC=25°C TA=25°C,RthJA=50K/W1)
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case, bottom
Thermal resistance, junction - case, top
Device on PCB, 6 cm2 cooling area1)
RthJC RthJC RthJA
Values Unit Note/TestCondition
Min. Typ. Max. - 0.5 0.9 K/W - - 20 K/W - - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Final Data Sheet
3 Rev.2.3,2019-10-31
OptiMOSTM5Power-Transistor,80V
BSC030N08NS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance1) Transconductance
V(BR)DSS VGS(th)
IDSS
IGSS
RDS(on)
RG gfs
Min. 80 2.2
-
-
-
55
Values Typ. Max. --
3 3.8
0.1 1 10 100
10 100
2.6 3.0 3.4 4.5
1.6 2.4
110 -
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=95µA
µA
VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=50A VGS=6V,ID=25A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1) Output capacitance1) Reverse transfer capacitance1)
Turn-on delay time
Ciss Coss Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min. -
-
-
-
Values Typ. Max. 4300 5600 700 910 32 56 20 -
12 -
43 -
13 -
Unit Note/TestCondition
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
ns
VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω
ns
VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω
ns
VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω
ns
VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge Gate charge at threshold Gate to drai.