BC817
NPN Silicon Epitaxial Planar Transistors
For switching, AF driver and amplifier applications
These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended.
1.Base 2.Emitter 3.Collector SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃) PARAMETER
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC Ptot RØJA TJ TS
VALUE 50 45 5 500 200 500 150
- 55 to + 150
UNIT V V V mA
mW K/W ℃ ℃
Electrical Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 20 V Emitter-Base Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at IC = 500 mA, VCE = 1 V Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz
-16 -25 -40
SYMBOL MIN. TYP.
100 hFE 160 -
250 40
ICBO
--
IEBO - -
VCEsat VBE(on)
ft
--100 -
CCBO
-5
MAX. UNIT
250 400 600
100 nA
100 nA
0.7 V
1.2 V
- MHz
- pF
Website: www.kingtronics.com Email:
[email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099
1
BC817
NPN Silicon Epitaxial Planar Transistors
RATINGS AND CHARACTERISTIC CURVES BC817
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com Email:
[email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099
2
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