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20NM60 Dataheets PDF



Part Number 20NM60
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet 20NM60 Datasheet20NM60 Datasheet (PDF)

STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 600 V 600 V 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 20 A 20 A s TYPICAL RDS(on) = 0.25 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE DES.

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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 600 V 600 V 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 20 A 20 A s TYPICAL RDS(on) = 0.25 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Figure 1: Package 3 2 1 TO-220 3 2 1 TO-220FP 3 1 D²PAK 3 2 1 TO-247 123 I²PAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STP20NM60 STP20NM60FP STB20NM60T4 STB20NM60-1 STW20NM60 MARKING P20NM60 P20NM60FP B20NM60 B20NM60 W20NM60 February 2005 PACKAGE TO-220 TO-220FP D²PAK I²PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE TUBE Rev.2 1/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Table 3: Absolute Maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX (*) Limited only by maximum temperature allowed Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose Value TO-220/D²PAK/ I²PAK/TO-247 TO-220FP 600 600 ±30 20 20 (*) 12.6 12.6 (*) 80 80 (*) 192 45 1.2 0.36 15 -- 2500 -65 to 150 150 Unit V V V A A A W W/°C V/ns V °C °C TO-220/D²PAK/ I²PAK/TO-247 0.65 62.5 300 TO-220FP 2.8 Unit °C/W °C/W °C Table 5: Avalanche Characteristics Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max. Value 10 650 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Test Conditions Min. Typ. Max. V(BR).


PTVA120251EA 20NM60 25L2026C


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