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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60
600 V 600 V 600 V 600 V 600 V
< 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω
20 A 20 A 20 A 20 A 20 A
s TYPICAL RDS(on) = 0.25 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE
CHARGE s LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Figure 1: Package
3 2 1
TO-220
3 2 1
TO-220FP
3 1
D²PAK
3 2 1
TO-247
123
I²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE STP20NM60 STP20NM60FP STB20NM60T4 STB20NM60-1 STW20NM60
MARKING P20NM60 P20NM60FP B20NM60 B20NM60 W20NM60
February 2005
PACKAGE TO-220
TO-220FP D²PAK I²PAK TO-247
PACKAGING TUBE TUBE
TAPE & REEL TUBE TUBE
Rev.2
1/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C
Derating Factor dv/dt (1) Peak Diode Recovery voltage slope
VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case Rthj-amb
Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose
Value
TO-220/D²PAK/ I²PAK/TO-247
TO-220FP
600
600
±30
20 20 (*)
12.6 12.6 (*)
80 80 (*)
192 45
1.2 0.36
15
-- 2500
-65 to 150
150
Unit
V V V A A A W W/°C V/ns V °C °C
TO-220/D²PAK/ I²PAK/TO-247
0.65 62.5
300
TO-220FP 2.8
Unit
°C/W °C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max. Value 10
650
Unit A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR).