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UF460V Dataheets PDF



Part Number UF460V
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet UF460V DatasheetUF460V Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UF460V 21A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UF460V uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.  FEATURES * RDS(ON) = 310mΩ@VGS = 10V, ID =21A * Ultra low gate charge (max. 190nC ) * Low reverse transfer capacitance ( CRSS = typi.

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UNISONIC TECHNOLOGIES CO., LTD UF460V 21A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UF460V uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.  FEATURES * RDS(ON) = 310mΩ@VGS = 10V, ID =21A * Ultra low gate charge (max. 190nC ) * Low reverse transfer capacitance ( CRSS = typical 250pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF460VL-T3P-T UF460VG-T3P-T UF460VL-T47-T UF460VG-T47-T Package TO-3P TO-247 Pin Assignment 123 GDS GDS Packing Tube Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A05. A UF460V Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous (VGS=0V) Pulsed (Note 2) Avalanche Current (Note2) Avalanche Energy Repetitive(Note2) Single Pulsed(Note3) Power Dissipation (TC=25°С) Peak Diode Recovery dv/dt (Note4) VGSS ID IDM IAR EAR EAS PD dv/dt ±20 21 84 21 30 1200 190 3.5 V A A A mJ W V/ns Junction Temperature TJ +150 °С Strong Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. VDD=50V, Starting TJ=25°С, Peak IL=21A 4. ISD≤21A, di/dt≤160A/µs, VDD≤500V, TJ≤150°С, Suggested=2.35Ω  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 30 °С/W Junction to Case θjC 0.42 °С/W  ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250µA 500 V Drain-Source Leakage Current IDSS VDS=400V,VGS =0 V 25 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ±100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°С, ID=1.0mA 0.78 V/°С ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On Resistance (Note) VGS(TH) RDS(ON) VDS =VGS, ID =250 µA VGS =10V, ID =14A VGS =10V, ID =21A 1 3V 210 270 310 mΩ DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS =25V, VGS =0V, f=1.0MHz 4300 1000 250 pF SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time QG QGS QGD tD(ON) tR tD(OFF) tF VDS =50V, VGS =10V, ID =1.3A VDD=30V, ID =0.5A, RG =25Ω 121 15 27.5 80 158 1570 386 nC ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current VSD IS=21A,VGS=0V, TJ =25°С IS Maximum Pulsed Drain-Source Diode Forward Current ISM Reverse Recovery Time tRR Reverse Recovery Charge QRR Note: Pulse Test: Pulse width ≤300μs, Duty cycle ≤2% IF=21 A, dI/dt=100A/µs, TJ =25°С,VDD≤50V(Note) 1.8 V 21 A 84 580 ns 8.1 µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-A05. A UF460V  TEST CIRCUITS AND WAVEFORMS Power MOSFET VGS =10V VGS VDS L RG DUT 0V tP IAS 0.01Ω 15V Driver VDD + - Unclamped Inductive Test Circuit V(BR)DSS tP IAS Unclamped Inductive Waveforms 2µF 12V + - VGS 50KΩ 3µF D.U.T + VDS - IG(REF)= 3mA IG ID Gate Charge Test Circuit VG 10V QGS QG QGD Charge Basic Gate Charge Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-A05. A UF460V  TYPICAL CHARACTERISTICS Power MOSFET Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-A05. A .


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