N-CHANNEL DEPLETION-MODE POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF601Q
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
DESCRIPTION
The UTC UF601Q is...
Description
UNISONIC TECHNOLOGIES CO., LTD UF601Q
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
DESCRIPTION
The UTC UF601Q is a N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.
FEATURES
* RDS(ON) ≤ 700 Ω @ VGS=0V, ID=3.0mA * High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF601QL-AE2-R
UF601QG-AE2-R
UF601QL-AE3-R
UF601QG-AE3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23-3 SOT-23
Pin Assignment
1
2
3
G
S
D
G
S
D
Packing
Tape Reel Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-A25.G
UF601Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
600
V
Drain-Gate Voltage (Note 2)
VDGX
600
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed
IDM
0.185
A
0.740
A
Power Dissipation
PD
0.50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
THERMAL DATA
PARAMETER Junction to Ambient
SYMBOL θJA
RATINGS 250
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT °C/W
PARAM...
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