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UF601Q

Unisonic Technologies

N-CHANNEL DEPLETION-MODE POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF601Q 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is...


Unisonic Technologies

UF601Q

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Description
UNISONIC TECHNOLOGIES CO., LTD UF601Q 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is a N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES * RDS(ON) ≤ 700 Ω @ VGS=0V, ID=3.0mA * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF601QL-AE2-R UF601QG-AE2-R UF601QL-AE3-R UF601QG-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-A25.G UF601Q Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 600 V Drain-Gate Voltage (Note 2) VDGX 600 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID Pulsed IDM 0.185 A 0.740 A Power Dissipation PD 0.50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C  THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 250  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) UNIT °C/W PARAM...




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