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UNISONIC TECHNOLOGIES CO., LTD UF730-E
5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance
SYMBOL
1
Power MOSFET TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF730L-TA3-T
UF730G-TA3-T
Package TO-220
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd.
1 of 6
QW-R502-A06.B
UF730-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C)
VDGR
400
V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current Pulsed Drain Current (Note 1)
ID 5.5 A IDM 22 A
Single Pulse Avalanche Energy (Note 2) Power Dissipation Junction Temperature Storage Temperature
EAS PD TJ TSTG
300 73 +150 -55 ~ +150
mJ W °C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case
SYMBOL θJA θJC
RATINGS 62.5 1.71
UNIT °C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6 QW-R502-A06.B
UF730-E
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage On-State Drain Current (Note 3)
BVDSS ID(ON)
VGS=0V, ID=250μA VDS>ID(ON)×RDS(ON)MAX, VGS=10V
Drain-Source Leakage Current Gate-Source Leakage Current
IDSS VDS=Rated BVDSS, VGS=0V IGSS VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance
CISS COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
tD(ON) tR
tD(OFF) tF
VDD=30V, ID≈0.5A, VGS=0~10V, RG=25Ω (Note 3, 4)
Total Gate Charge Gate-Source Charge Gate-Drain Charge
QG QGS QGD
VGS=50V, ID=1.3A, VDS=10V, IG=100μA
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current
VSD VGS=0V, ISD=5.5A IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Reverse Recovery Time
tRR ISD = 5.5A, dISD/dt = 100A/μs
Reverse Recovery Charge
QRR (Note 3)
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 20mH, IAS = 5.