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UF730-E Dataheets PDF



Part Number UF730-E
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet UF730-E DatasheetUF730-E Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UF730-E 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * Hi.

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UNISONIC TECHNOLOGIES CO., LTD UF730-E 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance  SYMBOL 1 Power MOSFET TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF730L-TA3-T UF730G-TA3-T Package TO-220 Pin Assignment 123 GDS Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd. 1 of 6 QW-R502-A06.B UF730-E Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C) VDGR 400 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Pulsed Drain Current (Note 1) ID 5.5 A IDM 22 A Single Pulse Avalanche Energy (Note 2) Power Dissipation Junction Temperature Storage Temperature EAS PD TJ TSTG 300 73 +150 -55 ~ +150 mJ W °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC RATINGS 62.5 1.71 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-A06.B UF730-E Power MOSFET  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage On-State Drain Current (Note 3) BVDSS ID(ON) VGS=0V, ID=250μA VDS>ID(ON)×RDS(ON)MAX, VGS=10V Drain-Source Leakage Current Gate-Source Leakage Current IDSS VDS=Rated BVDSS, VGS=0V IGSS VGS=±20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.0A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance CISS COSS VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tD(ON) tR tD(OFF) tF VDD=30V, ID≈0.5A, VGS=0~10V, RG=25Ω (Note 3, 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge QG QGS QGD VGS=50V, ID=1.3A, VDS=10V, IG=100μA DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current VSD VGS=0V, ISD=5.5A IS Maximum Pulsed Drain-Source Diode Forward Current ISM Reverse Recovery Time tRR ISD = 5.5A, dISD/dt = 100A/μs Reverse Recovery Charge QRR (Note 3) Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 20mH, IAS = 5.


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