UF830K

UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON)<1.5Ω @ ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL 1 1 1 1 TO-220 TO-220F TO-220F2 TO-252  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UF830KL-TA3-T UF830KG-TA3-T TO-220 UF830KL-TF3-T UF830KG-TF3-T TO-220F UF830KL-TF2-T UF830KG-TF2-T TO-220F2 UF830KL-TN3-R UF830KG-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel  MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F2 TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 6 QW-R502-A77.b UF830K Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) Gate to Source Voltage VDGR VGS 500 V ±30 V Drain Current Continuous Pulsed ID IDM 4.5 A 18 A TO-220 73 W Power Dissipation (TC = 25°C) TO-220F TO-2...